ROHM Semiconductor RS3L110ATTB1 MOSFETs Pch -60V -11A パワーMOSFET
生産者: ROHM Semiconductor Model: RS3L110ATTB1 - 連絡先
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Fall Time: 205 ns
Rise Time: 66 ns
Technology: Si
Unit Weight: 83 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P - Channel
Qg - Gate Charge: 115 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 22 ns
Typical Turn-Off Delay Time: 315 ns
Id - Continuous Drain Current: 11 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 12.8 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1 V
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