InterFET 2N3821 JFET JFET N沟道 -50V 低Ciss
制造商: InterFET Model: 2N3821 - 联系
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Technology: Si
Unit Weight: 1.430 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: - 4 V
Drain-Source Current at Vgs=0: 2.5 mA
Id - Continuous Drain Current: 400 uA
Forward Transconductance - Min: 1500 uS
Vgs - Gate-Source Breakdown Voltage: - 50 V
Vds - Drain-Source Breakdown Voltage: 15 V
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