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Sensor type : CdTe semiconductor crystals
Number of pixels : 128
Intrinsic pixel pitch : 0.8 mm
Crystal thickness : 2 mm
Counting period : 0.5 ms to 100 ms / line (step 10 μs)
Detector binning : 1x1 (0.8 mm pitch) or 2x1 (1.6 mm pitch)
Energy range : 20–160 keV
Number of energy bins : Up to 128
Linearity : ≥ 86% @ 2•106 counts/s/pix
Saturation : 5.0•106 counts/s/pix
Energy resolution : 7.7 KeV @ 60 keV (105 counts/pix/s)
Adjacent defective pixels : 0
Non adjacent defective pixels : 3 (2.3 %)
Overall uniformity : > -10% < 5%
Detector element length : 128 pixels / 102.3 mm
Mechanical dimensions : 34 mm x 220 mm x 103.5 mm
Weight : 0.70 kg
Operational voltage and power : 48 VDC
Power consumption per module : 28 W
X-ray tube voltage Vp range: Up to 160 kVp
EMC compliance : EN 61326-1, EN 61000-4-2, EN 61000-4-3
RoHS compliance : Yes
Operational temperature and humidity : 0°C to +40°C, 5-95% RH non-condensing
Storage temperature : -20°C to +60°C
