Fairchild FGY120T65SPD-F085 IGBT Transistors 650V FS Trench IGBT Gen3
Manufacturer: Fairchild Model: FGY120T65SPD-F085 - Contact
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Technology: Si
Unit Weight: 6.100 g
REACH - SVHC: Details
Configuration: Single
Qualification: AEC-Q101
Mounting Style: Through Hole
Pd - Power Dissipation: 882 W
Gate-Emitter Leakage Current: +/- 250 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 240 A
Collector-Emitter Saturation Voltage: 1.5 V
Continuous Collector Current at 25 C: 240 A
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