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Technology: Si
Unit Weight: 55 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: P-Channel
Pd - Power Dissipation: 350 mW
Gate-Source Cutoff Voltage: 6 V
Drain-Source Current at Vgs=0: - 7 mA to - 60 mA
Rds On - Drain-Source Resistance: 125 Ohms
Vgs - Gate-Source Breakdown Voltage: 30 V
