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Infineon GS61008P-MR GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled

Name: Infineon GS61008P-MR GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled
Brand: Infineon

ModelGS61008P-MR

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Technology: GaN

Unit Weight: 4.675 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: GS61008P-EVBHF, GSWP100W-EVBPA

Transistor Type: E-Mode

Qg - Gate Charge: 8 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Maximum Operating Frequency: > 10 MHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 90 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 9.5 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V