Fairchild FSB660A BJTs - バイポーラトランジスタ PNPトランジスタ 低飽和
生産者: Fairchild Model: FSB660A - 連絡先
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Width: 1.4 mm
Height: 0.94 mm
Length: 2.92 mm
Technology: Si
Unit Weight: 30 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 550
Gain Bandwidth Product fT: 75 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 2 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 250
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 300 mV
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