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PANJIT PJQ5465A_R2_00001 MOSFETs 60V Pチャネル 増強型MOSFET

Technology: Si

Unit Weight: 80 mg

Qg - Gate Charge: 22 nC

Moisture Sensitive: Yes

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 16 A

Rds On - Drain-Source Resistance: 48 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V

  • 良質な取り決め
  • オリジナル保証
  • 宅配便
  • 買い取り簡単化

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