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Width: 16.26 mm
Height: 5.31 mm
Length: 21.46 mm
Technology: Si
Unit Weight: 38 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 417 W
Operating Temperature Range: - 55 C to + 150 C
Continuous Collector Current: 69 A
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 69 A
Collector-Emitter Saturation Voltage: 3.3 V
Continuous Collector Current at 25 C: 69 A
