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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Maximum Drain Gate Voltage: 40 V
Drain-Source Current at Vgs=0: 6.6 mA
Id - Continuous Drain Current: 30 mA
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 65 C
Rds On - Drain-Source Resistance: 30 Ohms
Vgs - Gate-Source Breakdown Voltage: 40 V
Vds - Drain-Source Breakdown Voltage: 40 V
