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Gain: 21 dB
Technology: Si
Unit Weight: 13.264 g
Output Power: 140 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 470 MHz to 860 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.25 kW
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 17 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 19.4 S
Vds - Drain-Source Breakdown Voltage: 115 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
