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Width: 6 mm
Height: 8 mm
Length: 12.5 mm
Fall Time: 30 us
Rise Time: 30 us
Wavelength: 660 nm
Output Type: Phototransistor
Unit Weight: 3.009 g
Mounting Style: Through Hole
Sensing Method: Reflective
Sensing Distance: 4 mm
Number of Channels: 1 Channel
If - Forward Current: 20 mA
Vf - Forward Voltage: 1.2 V
Vr - Reverse Voltage: 3 V
Pd - Power Dissipation: 100 mW
Maximum Collector Current: 20 mA
Maximum Operating Temperature: + 70 C
Minimum Operating Temperature: 0 C
Collector- Emitter Voltage VCEO Max: 30 V
