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Technology: Si
Unit Weight: 0.694 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 100 mW
Gate-Source Cutoff Voltage: - 800 mV
Maximum Drain Gate Voltage: - 30 V
Drain-Source Current at Vgs=0: 3 mA
Id - Continuous Drain Current: 10 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 mS
Vgs - Gate-Source Breakdown Voltage: - 30 V
Vds - Drain-Source Breakdown Voltage: 30 V
