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Qorvo QPD1025 RF Power MOSFET 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN | EMIN.ASIA

GaN FETs
Qorvo QPD1025 RF Power MOSFET 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN

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Qorvo QPD1025 RF Power MOSFET 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN

ManufacturerQorvo(View more products from this manufacturer)

ModelQPD1025

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Gain: 22.5 dB

Technology: GaN-on-SiC

Output Power: 1.8 kW

Mounting Style: Screw Mount

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Transistor Polarity: Dual N-Channel

Pd - Power Dissipation: 685 W

Vgs - Gate-Source Voltage: - 2.8 V

Maximum Operating Frequency: 1.215 GHz

Minimum Operating Frequency: 960 MHz

Id - Continuous Drain Current: 28 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V

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