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Qorvo TGF2965-SM GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V | EMIN.ASIA

GaN FETs
Qorvo TGF2965-SM GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V

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Qorvo TGF2965-SM GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V

ManufacturerQorvo(View more products from this manufacturer)

ModelTGF2965-SM

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Gain: 18 dB

Technology: GaN

Unit Weight: 57.100 mg

Output Power: 6 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: P-Channel

Pd - Power Dissipation: 7.5 W

Maximum Operating Frequency: 3 GHz

Minimum Operating Frequency: 30 MHz

Id - Continuous Drain Current: 600 mA

Vgs - Gate-Source Breakdown Voltage: - 2.7 V

Vds - Drain-Source Breakdown Voltage: 32 V

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