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Width: 3.95 mm
Height: mm
Length: 4.9 mm
Fall Time: 4.8 ns
Rise Time: 3.5 ns
Technology: Si
Unit Weight: 83 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 6 nC
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.8 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6.9 ns
Typical Turn-Off Delay Time: 40.2 ns
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 11.1 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
