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Fall Time: 10 ns , 11 ns
Rise Time: 2 ns, 3 ns
Technology: Si
Unit Weight: 506.600 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 12 nC, 25 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 27 W, 48 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns , 14 ns
Typical Turn-Off Delay Time: 18 ns , 26 ns
Id - Continuous Drain Current: 20 A, 54 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 26 S, 49 S
Rds On - Drain-Source Resistance: 15.5 mOhms, 7 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
