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Width: 6.35 mm
Length: 19.05 mm
Technology: Si
Unit Weight: 1.620 g
Configuration: Quad
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 100
Gain Bandwidth Product fT: 350 MHz
Collector- Base Voltage VCBO: 36 V
Continuous Collector Current: 10 A
Maximum DC Collector Current: 30 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 36 V
Collector-Emitter Saturation Voltage: 50 mV
