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Advanced Semiconductor, Inc. BLV25 RF Bipolar Power RF Transistor

Technology: Si

Unit Weight: 13.094 g

Mounting Style: Screw Mount

Transistor Type: Bipolar Power

Operating Frequency: 108 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 220 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 17.5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 33 V

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