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Technology: Si
Unit Weight: 16.222 g
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 400 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 6.1 W
Emitter- Base Voltage VEBO: 3 V
Continuous Collector Current: 150 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 30 V
