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Gain: 14.1 dB
Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: pHEMT
NF - Noise Figure: 0.35 dB
Operating Frequency: 12 GHz
Pd - Power Dissipation: 125 mW
Gate-Source Cutoff Voltage: 400 mV
Id - Continuous Drain Current: 10 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 51.8 mS
Vgs - Gate-Source Breakdown Voltage: - 400 mV
Vds - Drain-Source Breakdown Voltage: 2 V
