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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 300 at 150 mA, 1 V
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 600 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 20 at 0.1 mA, 1 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 400 mV
