Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Gate-Source Cutoff Voltage: 10 V
Maximum Drain Gate Voltage: 40 V
Drain-Source Current at Vgs=0: 50 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Rds On - Drain-Source Resistance: 25 Ohms
Vgs - Gate-Source Breakdown Voltage: 40 V
