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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 350 mW
DC Current Gain hFE Max: 300 at 100 uA, 5 V
Gain Bandwidth Product fT: 30 MHz
Emitter- Base Voltage VEBO: 4.5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 50 mW
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 100 at 100 uA, 5 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 700 mV
