Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 350 mW
DC Current Gain hFE Max: 600 at 100 uA, 5 V
Gain Bandwidth Product fT: 30 MHz
Emitter- Base Voltage VEBO: 4.5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 50 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 200 at 100 uA, 5 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 700 mV
