Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 250 at 10 mA, 5 V
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 160 V
Continuous Collector Current: 600 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 60 at 1 mA, 5 V
Collector- Emitter Voltage VCEO Max: 140 V
Collector-Emitter Saturation Voltage: 150 mV
