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Central Semiconductor 2N5785 TIN/LEAD BJTs - Bipolar Transistors NPN 65Vcbo 50Vceo 5.0Vebo 1200mA

Name: Central Semiconductor 2N5785 TIN/LEAD BJTs - Bipolar Transistors NPN 65Vcbo 50Vceo 5.0Vebo 1200mA
Brand: Central Semiconductor

Model2N5785 TIN/LEAD

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 100 at 1200 mA, 2 V

Gain Bandwidth Product fT: 1 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 65 V

DC Collector/Base Gain hfe Min: 20 at 1200mA, 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 750 mV