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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 340 mW
DC Current Gain hFE Max: 630 at 2 mA, 5 V
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 45 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 100 at 10 uA, 5 V
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 350 mV
