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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 350 mW
Gain Bandwidth Product fT: 300 MHz, 250 MHz
Emitter- Base Voltage VEBO: 6 V, 5 V
Collector- Base Voltage VCBO: 60 V, 40 V
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 300 mV, 400 mV
