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Technology: Si
Unit Weight: 6 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 40 W
DC Current Gain hFE Max: 50 at 3 A, 4 V
Gain Bandwidth Product fT: 3 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 10 at 3 A, 4 V
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 1.2 V
