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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 300 at -100 mA, - 5 V
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 480 V
Continuous Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 80 at - 100 mA, - 5 V
Collector- Emitter Voltage VCEO Max: 450 V
Collector-Emitter Saturation Voltage: 700 mV
