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Diodes Incorporated BC848B-13-F BJTs - Bipolar Transistors NPN Small SIG 30V 30V VCEO 5.0V VEBO

Name: Diodes Incorporated BC848B-13-F BJTs - Bipolar Transistors NPN Small SIG 30V 30V VCEO 5.0V VEBO
Brand: Diodes Incorporated

ModelBC848B-13-F

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Technology: Si

Unit Weight: 80 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 310 mW

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 200 mV