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Fall Time: 22.5 ns, 82 ns
Rise Time: 9.6 ns, 16 ns
Technology: Si
Unit Weight: 116 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 32 nC, 56 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.3 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 6.6 ns, 8.1 ns
Typical Turn-Off Delay Time: 42.5 ns, 150 ns
Id - Continuous Drain Current: 9.5 A, 8.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 9 mOhms, 14 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 600 mV, 1 V
