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Fall Time: 13 ns, 35 ns
Rise Time: 8 ns, 9 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 1.64 nC, 1.1 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 900 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 3 ns, 7 ns
Typical Turn-Off Delay Time: 17 ns, 55 ns
Id - Continuous Drain Current: 680 mA, 460 mA
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 450 mOhms, 1.1 Ohms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 450 mV, 1.1 V
