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Fall Time: 5.3 ns, 30.9 ns
Rise Time: 15.1 ns, 14.7 ns
Technology: Si
Unit Weight: 74 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 37.6 nC, 33.7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.8 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 8.1 ns, 6.9 ns
Typical Turn-Off Delay Time: 24.3 ns, 53.7 ns
Id - Continuous Drain Current: 7.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 12.6 S, 16.6 S
Rds On - Drain-Source Resistance: 25 mOhms, 25 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
