Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 4.193 ms
Rise Time: 2.186 ms
Technology: Si
Unit Weight: 2.600 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 45.7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.47 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 1.005 ms
Typical Turn-Off Delay Time: 2.643 ms
Id - Continuous Drain Current: 24.4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage: 350 mV
