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Fall Time: 22.7 ns
Rise Time: 22.6 ns
Technology: Si
Unit Weight: 1.800 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 8.1 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 890 mW
Vgs - Gate-Source Voltage: - 6 V, + 6 V
Typical Turn-On Delay Time: 6.2 ns
Typical Turn-Off Delay Time: 30.1 ns
Id - Continuous Drain Current: 10 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 8.2 mOhms
Vds - Drain-Source Breakdown Voltage: 8 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
