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Width: 1.6 mm
Height: 1.1 mm
Length: 3 mm
Fall Time: 27.54 ns, 27.54 ns
Rise Time: 12.09 ns, 12.09 ns
Technology: Si
Unit Weight: 15 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 600 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 11.51 ns, 11.51 ns
Typical Turn-Off Delay Time: 55.34 ns, 55.34 ns
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Forward Transconductance - Min: 3.1 S, 3.1 S
Rds On - Drain-Source Resistance: 150 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
