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Fall Time: 17.8 ns
Rise Time: 7.7 ns
Technology: Si
Unit Weight: 80 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 4 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 4.3 ns
Typical Turn-Off Delay Time: 31.9 ns
Id - Continuous Drain Current: 400 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 2.4 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
