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Technology: Si
Unit Weight: 465 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1.3 W
Gain Bandwidth Product fT: 176 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 25 V
Continuous Collector Current: - 8 A
Maximum DC Collector Current: 8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 45 at - 8 A, - 2 V
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 1.15 V
