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Fall Time: 2 ns
Rise Time: 30 ns
Technology: Si
Unit Weight: 200 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: Power MOSFET
Qg - Gate Charge: 14 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 31 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 47 ns
Typical Turn-Off Delay Time: 19 ns
Id - Continuous Drain Current: 38 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 13 S
Rds On - Drain-Source Resistance: 10 mOhms
Vds - Drain-Source Breakdown Voltage: 45 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
