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Width: 1.6 mm
Height: 0.55 mm
Length: 1.6 mm
Fall Time: 1.7 ns, 16 ns
Rise Time: 2 ns, 4.8 ns
Technology: Si
Unit Weight: 25.200 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 3 nC, 5.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.3 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 4.5 ns, 4.7 ns
Typical Turn-Off Delay Time: 15 ns, 33 ns
Id - Continuous Drain Current: 3.4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 9 S, 7 S
Rds On - Drain-Source Resistance: 66 mOhms, 142 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 700 mV, 600 mV
