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Width: 4.5 mm
Height: 0.8 mm
Length: 5 mm
Technology: Si
Unit Weight: 242.300 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 4 N-Channel
Qg - Gate Charge: 5 nC
Number of Channels: 4 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.9 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 3.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 110 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2 V
