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Width: 3.9 mm
Height: 1.75 mm
Length: 4.9 mm
Fall Time: 4 ns, 9 ns
Rise Time: 9 ns, 9 ns
Technology: Si
Unit Weight: 187 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 9 nC, 12 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V, - 12 V, + 12 V
Typical Turn-On Delay Time: 8 ns, 16 ns
Typical Turn-Off Delay Time: 15 ns, 25 ns
Id - Continuous Drain Current: 6.5 A, 5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 22 S, 14 S
Rds On - Drain-Source Resistance: 25 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 600 mV, 1.2 V
