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Width: 5 mm
Height: 26 mm
Length: 20 mm
Technology: Si
Unit Weight: 6.756 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 200 W
DC Current Gain hFE Max: 85
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 1.7 kV
Continuous Collector Current: 20 A
Maximum DC Collector Current: 20 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 55
Collector- Emitter Voltage VCEO Max: 800 V
Collector-Emitter Saturation Voltage: 3 V
