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Width: 4.7 mm
Height: 9.4 mm
Length: 10.1 mm
Technology: Si
Unit Weight: 1.800 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 100 W
DC Current Gain hFE Max: 40
Gain Bandwidth Product fT: 4 MHz
Emitter- Base Voltage VEBO: 9 V
Collector- Base Voltage VCBO: 700 V
Continuous Collector Current: 12 A
Maximum DC Collector Current: 12 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 8
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 3 V
