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Width: 2.5 mm
Height: 6.3 mm
Length: 6.8 mm
Fall Time: 60 ns
Rise Time: 100 ns
Technology: Si
Unit Weight: 340 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 P-Channel
Qg - Gate Charge: 27 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 13 ns
Typical Turn-Off Delay Time: 22 ns
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 8.7 S
Rds On - Drain-Source Resistance: 135 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 4 V
