Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 4.19 mm
Height: 5.33 mm
Length: 5.2 mm
Technology: Si
Unit Weight: 201 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Gate-Source Cutoff Voltage: - 4.5 V
Maximum Drain Gate Voltage: 25 V
Id - Continuous Drain Current: 20 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vgs - Gate-Source Breakdown Voltage: - 25 V
