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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Gate-Source Cutoff Voltage: - 4 V
Maximum Drain Gate Voltage: 40 V
Operating Temperature Range: - 55 C to + 150 C
Id - Continuous Drain Current: 4.5 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vgs - Gate-Source Breakdown Voltage: - 40 V
