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Fall Time: 8 ns, 11 ns
Rise Time: 10 ns, 16 ns
Technology: Si
Unit Weight: 3 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 1.3 nC, 1.65 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 220 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 9 ns, 11 ns
Typical Turn-Off Delay Time: 10 ns, 26 ns
Id - Continuous Drain Current: 350 mA, 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1 S, 2 S
Rds On - Drain-Source Resistance: 396 mOhms, 756 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
